Download PDF by Gerd Leuchs, Thomas Beth: Quantum information processing

By Gerd Leuchs, Thomas Beth

ISBN-10: 352740371X

ISBN-13: 9783527403714

Quantum processing and verbal exchange is rising as a tough procedure in the beginning of the recent millennium. an exact perception into the present learn of quantum superposition, entanglement, and the quantum size strategy - the foremost components of quantum info processing. The authors extra deal with quantum protocols and algorithms. Complementary to related programmes in different nations and on the ecu point, the German learn beginning (DFG) all started a targeted examine software on quantum details in 1999. The contributions - written via top specialists - compile the most recent leads to quantum inforation in addition to addressing questions.

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Quantum processing and conversation is rising as a demanding strategy at first of the recent millennium. a precise perception into the present learn of quantum superposition, entanglement, and the quantum dimension strategy - the major elements of quantum info processing. The authors additional handle quantum protocols and algorithms.

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As we will show below, this situation may have changed now. This page intentionally left blank 7 Summary of disorder and interaction effects In an over all picture the conductivity of a two-dimensional electron gas at zero temperature can be characterized by the interplay of disorder and interactions. The former can be described using the dimensionless parameter kF lD , where kF is the Fermi wave vector and lD is the transport mean free path of the electrons at zero temperature. The interactions are quantified by the interaction parameter conventionally defined as rs = 1/ πns aB 2 in two dimensions, where ns is the sheet density of electrons (or holes) and aB is the effective Bohr radius.

5) for piezoelectric coupling, again with weak (resp. strong) screening. The Tl -dependent terms in the above equation can be regarded as being constant in the experiment. In the double-logarithmic plot they are responsible for the strong increase of the dissipated power at the lowest electron temperatures. They can be eliminated by adding an offset P0 (Tl ) to PE , which is theoretically given by c1 Tlα + c2 Tlα but experimentally found by the condition that resulting curves for different Tl must collapse onto a single curve.

The hole mobility in these structures increases with carrier concentration from 1000 cm2 /Vs at the lowest to 7800 cm2 /Vs at the highest density similar to other p-SiGe structures [238]. The ratio of the Drude scattering time τe and the quantum lifetime τq extracted from Shubnikov–de Haas oscillations is close to 1 indicating that transport is dominated by short-range scattering potentials. It was confirmed in other studies that large angle scattering at interface charges dominates the mobility in such structures [237, 238].

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Quantum information processing by Gerd Leuchs, Thomas Beth


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