New PDF release: A history of the world semiconductor industry

By Morris, Peter Robin

ISBN-10: 0863412270

ISBN-13: 9780863412271

Improvement of the thermionic valve. historic survey of early learn in semiconductors. improvement of the transistor. significant technical procedures utilized in semiconductor equipment fabrication. assessment of significant elements affecting the expansion of the us semiconductor undefined. overview of the criteria affecting the expansion of the japanese and South Korean semiconductor industries. evaluation of the ecu semiconductor

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E. beryllium and aluminum) would affect the rectifying properties of the crystal, and these were added, achieving some success, although the work proceeded largely on an ad hoc basis. ) In this context, Petritz states that 'even as late as 1948 rectifiers were made with tin-doped germanium which had a very high back voltage resistance for inverse voltages of 100 volts, and it was thought that tin was the doping element. 47 The results from the British work assisted in stimulating further work in the United States, and it was this later work which was to be of crucial importance in manufacturing crystal rectifiers of high quality.

It is important to remember that these figures compare the characteristics of a newly invented device with that of one which had already undergone decades of development. Drawbacks however remained. Transistors during their early stages of development could only handle low powers, and their frequency response was limited. It therefore became a matter of urgent necessity to improve their low value of frequency response, and also their power handling capacity. These limitations consequently stimulated the development of alternative methods of device fabrication.

Next, a brief survey outlines further developments which have arisen as a consequence of the impact of the integrated circuit. The three final sections of this chapter consider the evolution of the smallsignal semiconductor diode, the power rectifier and the thyristor. H. Brattain and J. l It was of a type which later became known as 'point contact' because of its form of construction. Development of the transistor 27 This invention was the product of over two years of goal orientated research dating from the summer of 1945, when authorisation to work was given for a solid-state research programme, resulting in the establishment of the ultimately successful team, working under the direction of Dr.

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A history of the world semiconductor industry by Morris, Peter Robin


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